document number: 72217 www.vishay.com s10-2212-rev. a, 27-sep-10 1 automotive p-channel 80 v (d-s) 175 c mosfet SQD50P08-25L vishay siliconix features ? halogen-free according to iec 61249-2-21 definition ?trenchfet ? power mosfet ? compliant to rohs directive 2002/95/ec ? aec-q101 qualified d notes a. package limited. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. c. when mounted on 1" square pcb (fr-4 material). d. parametric verification ongoing. product summary v ds (v) - 80 r ds(on) ( ? ) at v gs = - 10 v 0.025 r ds(on) ( ? ) at v gs = - 4.5 v 0.031 i d (a) - 50 configuration single s g d p-channel mosfet to-252 s gd top view drain connected to tab ordering information package to-252 lead (pb)-free and halo gen-free SQD50P08-25L-ge3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds - 80 v gate-source voltage v gs 20 continuous drain current t c = 25 c a i d - 50 a t c = 125 c - 28 continuous source curre nt (diode conduction) a i s - 50 pulsed drain current b i dm - 120 single pulse avalanche current l = 0.1 mh i as - 45 single pulse avalanche energy e as 100 mj maximum power dissipation b t c = 25 c p d 136 w t c = 125 c 45 operating junction and storage temperature range t j , t stg - 55 to + 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 50 c/w junction-to-case (drain) r thjc 1.1
www.vishay.com document number: 72217 2 s10-2212-rev. a, 27-sep-10 SQD50P08-25L vishay siliconix notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not su bject to production testing. c. independent of operating temperature. stresses beyond those listed under absolute maximum ratings may cause permanen t damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the sp ecifications is not implied. exposure to absolute maximum rating conditions for extended peri ods may affect de vice reliability. specifications (t c = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source brea kdown voltage v ds v gs = 0 v, i d = - 250 a - 80 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1.5 - 2.0 - 2.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = - 80 v - - - 1 a v gs = 0 v v ds = - 80 v, t j = 125 c - - - 50 v gs = 0 v v ds = - 80 v, t j = 175 c - - - 250 on-state drain current a i d(on) v gs = - 10 v v ds ??? - 5 v - 50 - - a drain-source on-state resistance a r ds(on) v gs = - 10 v i d = - 12.5 a - 0.020 0.025 ? v gs = - 10 v i d = - 12.5 a, t j = 125 c - - 0.044 v gs = - 10 v i d = - 12.5 a, t j = 175 c - - 0.055 v gs = - 4.5 v i d = - 10.5 a - 0.025 0.031 forward transconductance b g fs v ds = - 15 v, i d = - 12.5 a - 38 - s dynamic b input capacitance c iss v gs = 0 v v ds = - 25 v, f = 1 mhz - 4279 5350 pf output capacitance c oss - 356 445 reverse transfer capacitance c rss - 239 300 total gate charge c q g v gs = - 10 v v ds = - 40 v, i d = - 12.5 a - 91 137 nc gate-source charge c q gs -8.2- gate-drain charge c q gd -24- turn-on delay time c t d(on) v dd = - 40 v, r l = 3.2 ? i d ? - 12.5 a, v gen = - 10 v, r g = 1 ? -1015 ns rise time c t r -1117 turn-off delay time c t d(off) - 71 107 fall time c t f -1624 source-drain diode ratings and characteristics b pulsed current a i sm - - - 120 a forward voltage v sd i f = - 10.5 a, v gs = 0 v - - 0.82 - 1.5 v
document number: 72217 www.vishay.com s10-2212-rev. a, 27-sep-10 3 SQD50P08-25L vishay siliconix typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current transfer characteristics transconductance capacitance 0 20 40 60 80 100 120 140 0 3 6 9 12 15 i d - drain current (a) v d s -drain-to- s ource voltage (v) v gs = 10 v thru 6 v v gs = 5 v v gs = 4 v 0.0 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = 25 c t c = - 55 c t c = 125 c 0.00 0.02 0.04 0.06 0.08 0.10 0 20 40 60 80 100 120 r d s (on) -on-re s i s tance () i d -drain current (a) v gs = 4.5 v v gs = 10 v 0 20 40 60 80 100 0 2 4 6 8 10 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = - 55 c t c = 125 c t c = 25 c 0 20 40 60 80 100 0 14 28 42 56 70 g f s -tran s conductance ( s ) i d -drain current (a) t c = 125 c t c = - 55 c t c = 25 c 0 1000 2000 3000 4000 5000 6000 7000 0 10 20 30 40 50 60 70 80 c - capacitance (pf) v d s -drain-to- s ource voltage (v) c i ss c o ss c r ss
www.vishay.com document number: 72217 4 s10-2212-rev. a, 27-sep-10 SQD50P08-25L vishay siliconix typical characteristics (t a = 25 c, unless otherwise noted) gate charge source drain diode forward voltage threshold voltage on-resistance vs. j unction temperature on-resistance vs. gate-to-source voltage drain source brea kdown vs. junction temperature 0 2 4 6 8 10 0 10 20 30 40 50 60 70 80 90 100 v gs - g ate-to- s ource voltage (v) q g -total g ate charge (nc) i d = 12.5 a v d s = 40 v 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - s ource current (a) v s d - s ource-to-drain voltage (v) t j = 25 c t j = 150 c -0.4 -0.1 0.2 0.5 0.8 1.1 - 50 - 25 0 25 50 75 100 125 150 175 v gs (th) variance (v) t j -temperature ( c) i d = 250 a i d = 5 ma 0.5 0.9 1.3 1.7 2.1 2.5 - 50 - 25 0 25 50 75 100 125 150 175 r d s (on) -on-re s i s tance (normalized) t j - junction temperature ( c) i d = 12.5 a v gs = 4.5 v v gs s (on) -on-re s i s tance () v gs - g ate-to- s ource voltage (v) t j = 150 c t j = 25 c - 105 - 100 -95 -90 -85 -80 - 50 - 25 0 25 50 75 100 125 150 175 v d s -drain-to- s ource voltage (v) t j - junction temperature ( c) i d = 10 ma
document number: 72217 www.vishay.com s10-2212-rev. a, 27-sep-10 5 SQD50P08-25L vishay siliconix thermal ratings (t a = 25 c, unless otherwise noted) safe operating area normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 i d - drain current (a) v d s -drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecied 100 m s limited by r d s (on) * 1 m s i dm limited t c = 25 c s ingle pul s e bvd ss limited 10 m s 100 s 1 s ,10 s , dc square wave pulse duration (s) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 10 normalized eff ective transient thermal impedance 1000 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 100 1
www.vishay.com document number: 72217 6 s10-2212-rev. a, 27-sep-10 SQD50P08-25L vishay siliconix thermal ratings (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the two graphs - normalized transient thermal impedance junction-to-ambient (25 c) - normalized transient thermal impedance junction-to-case (25 c) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circuit board - fr4, size 1" x 1" x 0.062", double sided with 2 oz . copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. vishay siliconix maintains worldwide manufa cturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72217 . square wave pulse duration (s) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 10 normalized eff ective transient thermal impedance 100 0.2 0.1 duty cycle = 0.5 1 0.02 0.05 single pulse
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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